The LT1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) rail of up to 60V. The internal logic prevents the inputs from turning on the power MOSFETs in a half-bridge at the same time.

Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families of and silicon MOSFETs, IGBTs, Gallium Nitride HEMTs, and Silicon Carbide MOSFETs as well as such as Easy, Econo power modules, require tuning of gate drive circuits to take full advantage of their capacity and capabilities.

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An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Artistic anatomy by dr paul richer pdf. Our EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode(BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation(functional, basic and reinforced), etc. This might also be of interest for you.